Journal: Scientific Reports
Article Title: Ambipolar thin-film transistors and inverter circuits based on mixed-dimensional bilayer heterostructures
doi: 10.1038/s41598-026-40382-0
Figure Lengend Snippet: ( a ) Schematic cross-section of an ambipolar TFT whose channel consists of a MoS₂ and inkjet printed SWCNTs on an HfO 2 /Si substrate. ( b ) Optical microscope image of the SWCNTs/MoS 2 bilayer ambipolar TFT. ( c ) FE-SEM image of the bilayer channel region, showing random networks of SWCNTs formed on the HfO 2 and MoS 2 . ( d ) AFM image of the CVD grown monolayer MoS 2 on a SiO 2 /Si substrate. The inset shows the thickness of the MoS 2 . ( e ) Raman spectrum and (f) PL of the monolayer MoS 2 .
Article Snippet: Field-emission scanning electron microscopy (FE-SEM) images were obtained using a JSM-6700F system (JEOL) operated at an accelerating voltage of 3 kV in the gentle beam mode.
Techniques: Microscopy